Er ions were implanted in Ⅲ-Ⅴ compounds semiconductors GaP

GaAs and InP with relatively high dosages 5×10

14

/cm

2

at 150keV and 350keV

respectively. Secondary Ion Mass Spectrpmetry(SIMS)depth profiles were carried out on a Cameca IMS4f ionmi-croprobe using a 600nA

15keV O

2

+

primary beam

rastered by 400m×400m over the sample. A mechanical aperture was employed to select positive secondary ions from the central portion of the crater(~60m in diameter). The crater total depth was measured using a profilometer. Depth profiles have been obtained and the peak depths in GaP

GaAs

InP are 55nm

51nm

56nm and 85nm

83nm

80nm at 150keV and 350keV

respectively. The sharp photoluminescence (PL)spectra have been observed at 1.538m

which correspond to the transition from the first state

4

I

13/2

to the ground state

4

I

15/2

of Er

3+

after face to face annealing.