STUDIES ON LOW TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF InGaAs/GaAs STRAINED QUANTUM WELLS BY MOCVD

Wang Xiaojun; Zheng Lianxi; Wang Qiming; Zhuang Wanru; Huang Meichun; Zheng Wanhua

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STUDIES ON LOW TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF InGaAs/GaAs STRAINED QUANTUM WELLS BY MOCVD

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- STUDIES ON LOW TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF InGaAs/GaAs STRAINED QUANTUM WELLS BY MOCVD
- Chinese Journal of Luminescence Vol. 15, Issue 3, Pages: 190-200(1994)
- 作者机构：
  
  1. 厦门大学物理系厦门,361005
  2. 集成光电子学国家重点联合实验室中国科学院半导体所区北京,100083
  3. 国家光电子工艺中心北京,100083
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：08 December 1993，
  
  Published：30 August 1994
- 稿件说明：
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王小军, 郑联喜, 王启明, 庄婉如, 黄美纯, 郑婉华. MOCVD的InGaAs/GaAs应变层量子阱的低温光致发光研究[J]. 发光学报, 1994,15(3): 190-200

Wang Xiaojun, Zheng Lianxi, Wang Qiming, Zhuang Wanru, Huang Meichun, Zheng Wanhua. STUDIES ON LOW TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF InGaAs/GaAs STRAINED QUANTUM WELLS BY MOCVD[J]. Chinese Journal of Luminescence, 1994,15(3): 190-200
王小军, 郑联喜, 王启明, 庄婉如, 黄美纯, 郑婉华. MOCVD的InGaAs/GaAs应变层量子阱的低温光致发光研究[J]. 发光学报, 1994,15(3): 190-200 DOI：

Wang Xiaojun, Zheng Lianxi, Wang Qiming, Zhuang Wanru, Huang Meichun, Zheng Wanhua. STUDIES ON LOW TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF InGaAs/GaAs STRAINED QUANTUM WELLS BY MOCVD[J]. Chinese Journal of Luminescence, 1994,15(3): 190-200 DOI：

摘要

本文中利用MOCVD方法得到了高质量的InGaAs/GaAs应变层量子阱材料

4.3nm量子阱10KPLFWHM仅为3.49meV.通过对样品荧光谱在变激发强度

变温时的峰位、峰形研究

我们发现

合金组分起伏散射是样品低温荧光谱展宽的主要原因

因而是MOCVD生长中应该首先解决的问题

实验结果还表明

在讨论低温PL谱形时

必需考虑光生载流子由随机起伏势中高能位置向低能位置的迁移过程。

Abstract

High quality strained quantum well

with photoluminescence FWHM of 4.3nm at 10K only 3.49meV

is obtained by MOCVD technology.Based on studies of low temperature spectra of several InGaAs/GaAs strained quantum well samples as function of excitation intensity and temperature

we conclud that the inhomogeneity of the exciton energy caused by composition fluctuation in the well

being the greatest contributors to inhomogeneous broadening

is the major problem to be solved during MOCVD processing.The experimental results also indicate that the migration of carriers to low-energy sites in the fluctuation potentials should be considered when we study the photoluminescence line shapes of excitons in quantum wells.

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