HIGH BRIGHTNESS SH GaAlAs RED LIGHT-EMITTING DIODES

Luo Zhongtie; He Shengfu; Dong Ping; Li Xiangwen; Wei Wenchao; Zhao Yu

doi:null

您当前的位置：

首页 >

文章列表页 >

HIGH BRIGHTNESS SH GaAlAs RED LIGHT-EMITTING DIODES

更新时间：2020-08-11

- HIGH BRIGHTNESS SH GaAlAs RED LIGHT-EMITTING DIODES
- Chinese Journal of Luminescence Vol. 14, Issue 4, Pages: 320-324(1993)
- 作者机构：
  
  中国科学院长春物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：07 April 1993，
  
  Published：30 November 1993
- 稿件说明：
移动端阅览
罗宗铁, 何胜夫, 董萍, 李向文, 魏文超, 赵宇. 高亮度GaAlAs单异质结红光二极管[J]. 发光学报, 1993,14(4): 320-324

Luo Zhongtie, He Shengfu, Dong Ping, Li Xiangwen, Wei Wenchao, Zhao Yu. HIGH BRIGHTNESS SH GaAlAs RED LIGHT-EMITTING DIODES[J]. Chinese Journal of Luminescence, 1993,14(4): 320-324
罗宗铁, 何胜夫, 董萍, 李向文, 魏文超, 赵宇. 高亮度GaAlAs单异质结红光二极管[J]. 发光学报, 1993,14(4): 320-324 DOI：

Luo Zhongtie, He Shengfu, Dong Ping, Li Xiangwen, Wei Wenchao, Zhao Yu. HIGH BRIGHTNESS SH GaAlAs RED LIGHT-EMITTING DIODES[J]. Chinese Journal of Luminescence, 1993,14(4): 320-324 DOI：

摘要

本文从工业生产角度对GaAlAs单异质结红光二极管的芯片制作技术作了细致研究.设计出能同时生长多枚外延片的新结构生长舟

选择了合适的管芯参数与生长条件

制定出稳定重复的工艺流程.用本项技术制出的单异质结管芯

发光波长为660nm

平均亮度达到4.5mcd/20mA

最高亮度达6.2mcd.

Abstract

The fabrication technology in quantity of GaAlAs single heterostructure red LED’s has been investigated in detail. A growth boat with new structure has been designed to carry out simultaneous LPE growth on many substrates. An effort has been made to obtain the optimum solution composition and the best growth parameters. A growth process for epitaxial wafers with excellent proformance and good reproducibility has been established. The LED’s dices fabricated by this process have emission wavelength of 660mm

mean brightness of 4.5mcd at 20mA and the highest value of 6.2mcd.

关键词

Keywords

references

Views

167

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰