ZnSe-ZnS superlattices(SLS) are grown by MOCVD on (100) GaAs substrstes

following the deposition of a 1μm-thick ZnS buffer layer. Each sample is composed of 50 ZnSe wells of thicknesses

L

w

=8nm and 50 ZnS barries of thicknesses

L

b

=8nm

respectively. The samples are stuck on clear glr.ss so that the GaAs substrate material is exposed. The GaAs substrate is mechanically lapped to a thickness of 200-300μm and then etched a light window with a selective chemical etch.Three light windows

on which the thicknesses of SLS and ZnS are 0.8 and 1μm

respectively

are obtained on the same sample after chemical etching hole and their absorption spectra are measured at room temperature. It is found that the excitonic absorption properties of three holes are the same although the qualities of surface of grown layer near to GaAs are not same because of effect of chemical etching on its growth layer. The one of three light windows is cleaved and the etching depth is measured by using SEM. It is found that the existence of ZnS buffer layer protects the excitonic properties of SLS layer because the etched depth is less than thickness of ZnS buffer layer.The light window area of 3×3mm

2

with grown layer of l.8μm in thick have been obtained by anodization methode for the first time. Microscope observation (×120) shows the light window surface near to GaAs is very smooth. The 300×300μm

2

multiple arraies on the ZnSe-ZnS SLS of 3×3mm

2

have been carried out recently. This result shows it is possible to obtain the integration of optical switching and optical computing devieces in ZnSe-ZnS SLS.