GaAs RIB WAVEGUIDE MACH-ZEHNDER INTERFEROMETRIC MODULATOR

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- GaAs RIB WAVEGUIDE MACH-ZEHNDER INTERFEROMETRIC MODULATOR
- Chinese Journal of Luminescence Vol. 14, Issue 4, Pages: 384-386(1993)
- 作者机构：
  
  1. 中国科学院长春物理研究所
  2. 洛桑瑞士联邦技术学院
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：01 February 1993，
  
  Published：30 November 1993
- 稿件说明：
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王立军, 武胜利, R. P. Salathe. GaAs脊型波导Mach-Zehnder干涉调制器[J]. 发光学报, 1993,14(4): 384-386

Wang Lijun, Wu Shengli, R. P. Salatbe. GaAs RIB WAVEGUIDE MACH-ZEHNDER INTERFEROMETRIC MODULATOR[J]. Chinese Journal of Luminescence, 1993,14(4): 384-386
王立军, 武胜利, R. P. Salathe. GaAs脊型波导Mach-Zehnder干涉调制器[J]. 发光学报, 1993,14(4): 384-386 DOI：

Wang Lijun, Wu Shengli, R. P. Salatbe. GaAs RIB WAVEGUIDE MACH-ZEHNDER INTERFEROMETRIC MODULATOR[J]. Chinese Journal of Luminescence, 1993,14(4): 384-386 DOI：

半导体电光波导调制器是半导体集成光学中具有代表性的器件之一

在光纤通讯、光信息处理等方面有着广阔的应用前景。它能和半导体激光器、探测器、电子线路等各种光、电元件实现单片集成

使设备和系统减少接口

缩小体积

提高可靠性。随着光通讯的发展

半导体调制器件的研究也越来越受到重视

在理论分析、结构设计、材料研制和器件工艺技术等方面也都取得了很大进展。由于GaAs材料具有良好的电、光性能

首先被用于制作GaAs光波导Mach-Zehnder干涉调制器中。

GaAs rib waveguide interferometric modulator with Schottky-barrier electrodes have been fabricated in n

GaAs by reactive ion etching and lift off mask techniques. The device total losses was 11.2 dB. An extinction ratio of-24.2 dB

and half wave voltage of

=21V was obtained for single-mode optical systems operationg at 1.3 μm. The device principle

fabracation and character are introduced.

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