LUMINESCENCE OF FREE EXCITON INTERACTION IN ZnSxSe1-x MIS DIODES UNDER FORWARD--BIASED DIRECT CURRENT EXCITATION

Zhang Jiying; Fan Xiwu; Shen Dezhen

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LUMINESCENCE OF FREE EXCITON INTERACTION IN ZnS_xSe_1-x MIS DIODES UNDER FORWARD--BIASED DIRECT CURRENT EXCITATION

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- LUMINESCENCE OF FREE EXCITON INTERACTION IN ZnS_xSe_1-x MIS DIODES UNDER FORWARD--BIASED DIRECT CURRENT EXCITATION
- Chinese Journal of Luminescence Vol. 13, Issue 3, Pages: 193-199(1992)
- 作者机构：
  
  中国科学院长春物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：17 February 1992，
  
  Published：30 August 1992
- 稿件说明：
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张吉英, 范希武, 申德振. 电流激发下ZnSxSe1-xMIS二极管中的自由激子发光 [J]. 发光学报, 1992,13(3): 193-199

Zhang Jiying, Fan Xiwu, Shen Dezhen. LUMINESCENCE OF FREE EXCITON INTERACTION IN ZnSxSe1-x MIS DIODES UNDER FORWARD--BIASED DIRECT CURRENT EXCITATION[J]. Chinese Journal of Luminescence, 1992,13(3): 193-199
张吉英, 范希武, 申德振. 电流激发下ZnSxSe1-xMIS二极管中的自由激子发光 [J]. 发光学报, 1992,13(3): 193-199 DOI：

Zhang Jiying, Fan Xiwu, Shen Dezhen. LUMINESCENCE OF FREE EXCITON INTERACTION IN ZnSxSe1-x MIS DIODES UNDER FORWARD--BIASED DIRECT CURRENT EXCITATION[J]. Chinese Journal of Luminescence, 1992,13(3): 193-199 DOI：

摘要

在77K下

研究了ZnS

1-x

MIS二极管在正向直流激发下的激子发光行为.首次在直流电流密度(20-35mA/mm

)下

在高质量ZnSe(x=0)和ZnS

1-x

(x=0.22)MIS二极管中观测到两个新发射带

对于ZnSe单晶

谱带峰值分别为447.9nm和450.0nm

对于ZnS

0.22

0.78

单晶

谱带峰值分别为426.3nm和428.7nm.这一现象在通常的ZnS

1-x

晶体中观测不到

仅在高质量ZnS

1-x

单晶中检测到.文中根据它们的发光特征

把两个谱带的起因归于不同的激子散射.

Abstract

At present there is no literature about luminescence of exciton-exciton(E

-E

)interaction in ZnS

1-x

MIS diodes under forward-biased direct current excitation.This paper reports the first observation of two emission bands P and P

at 77K with direct current density(

)from 20-50mA/mm

in pure ZnSe and ZnS

0.22

0.78

MIS diodes which are attributed to the different Ex-Ex interaction.Samples for this study were grown by the sublimation method

[6]

.ZnSe(x=0)and ZnS

0.22

0.78

single crystals were selected.The low resistivity crystals were obtained by annealing in molten zinc at 900-950℃ for 100h

and then ZnSe and ZnS

0.22

0.78

MIS diodes were prepared fron these annealed crystals.

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