It is achieved to obtain 1.3nm double carrier confine(DCC) structure semiconductor lasei with high T

0

by using general LPE technique. Composition matching of two active layers

doping concentration and growing condition are strictly controlled. The radiative recombination probability of super hot carriers which are generated by Augei recombination and leaked from the first active layer is increased

so that the carrieis leaking into InP clad layer are decreased

The T

0

of DCC structure InGaAsP/InP semiconductor laser is as high as 150K in the operating range of 293-343K. The relationship between spontaneous emission spectrum and injected current density for DCC lasei is discussed. The influence of the composition matching of active layeis and the thickness of thin sandwich layer on the threshold current density and T

0

is analysed.