INFLUENCE OF HEAT TREATMENT IN VACUUM ON PHOTOLUMINESCENCE OF VPE ZnSxSe1-x EPILAYER

Zhang Jiahua; Fan Xiwu

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INFLUENCE OF HEAT TREATMENT IN VACUUM ON PHOTOLUMINESCENCE OF VPE ZnS_xSe_1-x EPILAYER

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- INFLUENCE OF HEAT TREATMENT IN VACUUM ON PHOTOLUMINESCENCE OF VPE ZnS_xSe_1-x EPILAYER
- Chinese Journal of Luminescence Vol. 11, Issue 2, Pages: 90-95(1990)
- 作者机构：
  
  中国科学院长春物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：15 June 1989，
  
  Published：30 May 1990
- 稿件说明：
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张家骅, 范希武. 真空热处理对VPE ZnSxSe1-x外延膜发光的影响[J]. 发光学报, 1990,11(2): 90-95

Zhang Jiahua, Fan Xiwu. INFLUENCE OF HEAT TREATMENT IN VACUUM ON PHOTOLUMINESCENCE OF VPE ZnSxSe1-x EPILAYER[J]. Chinese Journal of Luminescence, 1990,11(2): 90-95
张家骅, 范希武. 真空热处理对VPE ZnSxSe1-x外延膜发光的影响[J]. 发光学报, 1990,11(2): 90-95 DOI：

Zhang Jiahua, Fan Xiwu. INFLUENCE OF HEAT TREATMENT IN VACUUM ON PHOTOLUMINESCENCE OF VPE ZnSxSe1-x EPILAYER[J]. Chinese Journal of Luminescence, 1990,11(2): 90-95 DOI：

摘要

本文测量了经真空热处理的VPE ZnS

1-x

(X=0.055

0.22)外延膜液氮温度下的光致发光(PL)光谱

观察到一个新的蓝色发光带

并把这一谱带归结为导带中自由电子与束缚在深受主中心上空穴的复合.实验表明

深受主中心是在真空热处理时形成

并与真空热处理时在外延层中产生的Zn空位有关.

Abstract

There is considerable interest in luminescence of ZnS

1-x

bluk crystals and epilayeis.P.K.Chatter jee et al.and M.Yamaguchi et al.observed a broad band(4700-4800Å)in photoluminescence(PL)spectra in Aland Na-doped ZnSe at 4.2K and in Li-or Na-doped ZnSe at 90K

respectively

They attributed this band to D-A pair recombination and free to bound recombination

respectively.In this paper we leport that a broad band A was observed in PL spectra in vacuum heated VPE ZnS

1-x

epilayers at LNT.The origin of the band A is discussed.VPE ZnS

1-x

.epilayers used in this work were grown on(100)GaAs substrate with VPE method.Specimen was excited by 500W Hg arc lamp

PL spectra were measured using a grating spectromator of Model 44W with C31034 cooled photomultiplier.

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