INVESTIGATION OF DEEP LEVEL IN Se+-ION-IMPLANTED ZnSe CRYSTAL

Ka Weibo; Yang Xizhen; Wang Xizhen; Fan Xiwu(X. W. Fan)

doi:null

您当前的位置：

首页 >

文章列表页 >

INVESTIGATION OF DEEP LEVEL IN Se⁺-ION-IMPLANTED ZnSe CRYSTAL

更新时间：2020-08-11

- INVESTIGATION OF DEEP LEVEL IN Se⁺-ION-IMPLANTED ZnSe CRYSTAL
- Chinese Journal of Luminescence Vol. 10, Issue 3, Pages: 192-197(1989)
- 作者机构：
  
  1. 中国科学院长春物理研究所
  2. 北京师范大学物理系
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：23 March 1988，
  
  Published：30 August 1989
- 稿件说明：
移动端阅览
喀蔚波, 杨锡震, 王世润, 范希武. Se+注入ZnSe晶体的深能级研究[J]. 发光学报, 1989,10(3): 192-197

Ka Weibo, Yang Xizhen, Wang Xizhen, Fan Xiwu(X. W. Fan). INVESTIGATION OF DEEP LEVEL IN Se+-ION-IMPLANTED ZnSe CRYSTAL[J]. Chinese Journal of Luminescence, 1989,10(3): 192-197
喀蔚波, 杨锡震, 王世润, 范希武. Se+注入ZnSe晶体的深能级研究[J]. 发光学报, 1989,10(3): 192-197 DOI：

Ka Weibo, Yang Xizhen, Wang Xizhen, Fan Xiwu(X. W. Fan). INVESTIGATION OF DEEP LEVEL IN Se+-ION-IMPLANTED ZnSe CRYSTAL[J]. Chinese Journal of Luminescence, 1989,10(3): 192-197 DOI：

摘要

将Se离子注入到ZnSe晶体中

用深能级瞬态谱仪(DLTS)测量了注Se

前后ZnSe晶体中深能级的变化

发现在ZnSe中经常出现的分别位于导带下0.30eV和0.33eV的两个能级在注Se

和退火后消失。这个结果进一步证实了Beomi等人提出的以上两个能级分别与Se双空位和包含一个Se单空位的复合体有关的论点。同时注Se

后在导带下0.34eV出现一个新的能级

其电子俘获截面明显区别于0.33eV能级。该能级可能与Se填隙原子或占Zn位的反位Se原子有关。

Abstract

ZnSe has the potential to be used to make blue LED because it has wide band gap

and its strong blue exciton luminescence is observed even at the room temperature

[1]

. The main obstruction in practice is that the p-type ZnSe with low resistivity is difficult to produce due to self-compensation. It seems that the self-compensation effect is related to the native defects originating in nonstoich-iometry during crystal growth

[1]

. The two electron traps which are located at 0.30 and 0.33eV (labeled as A and B thereafter) below conduction band are commonly observed in ZnSe. Some authors suggested that these traps be associated with Se vacancies

关键词

Keywords

references

Views

148

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰