THE EFFECT OF ANNEALING ON THE CROSS-RELAX-ATION PROCESSES OCCURRED BETWEEN Er3+ IONS IN ZnS:ErF3 THIN FILMS

Meng Lijian; Tao Shiwen; Li Changhua; Zhong Guozhu

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THE EFFECT OF ANNEALING ON THE CROSS-RELAX-ATION PROCESSES OCCURRED BETWEEN Er³⁺ IONS IN ZnS:ErF₃ THIN FILMS

更新时间：2020-08-11

- THE EFFECT OF ANNEALING ON THE CROSS-RELAX-ATION PROCESSES OCCURRED BETWEEN Er³⁺ IONS IN ZnS:ErF₃ THIN FILMS
- Chinese Journal of Luminescence Vol. 9, Issue 3, Pages: 185-190(1988)
- 作者机构：
  
  中国科学院长春物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：25 November 1987，
  
  Published：30 August 1988
- 稿件说明：
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孟立建, 陶世文, 李长华, 钟国柱. 热退火对ZnS:ErF3薄膜交流电致发光(ACEL)特性的影响[J]. 发光学报, 1988,9(3): 185-190

Meng Lijian, Tao Shiwen, Li Changhua, Zhong Guozhu. THE EFFECT OF ANNEALING ON THE CROSS-RELAX-ATION PROCESSES OCCURRED BETWEEN Er3+ IONS IN ZnS:ErF3 THIN FILMS[J]. Chinese Journal of Luminescence, 1988,9(3): 185-190
孟立建, 陶世文, 李长华, 钟国柱. 热退火对ZnS:ErF3薄膜交流电致发光(ACEL)特性的影响[J]. 发光学报, 1988,9(3): 185-190 DOI：

Meng Lijian, Tao Shiwen, Li Changhua, Zhong Guozhu. THE EFFECT OF ANNEALING ON THE CROSS-RELAX-ATION PROCESSES OCCURRED BETWEEN Er3+ IONS IN ZnS:ErF3 THIN FILMS[J]. Chinese Journal of Luminescence, 1988,9(3): 185-190 DOI：

摘要

本文研究了退火温度以及退火时间的改变对ZnS:ErF

薄膜ACEL特性的影响。从ACEL光谱上可以看到

随退火温度增加或退火时间的积累

对应于

9/2

→

15/2

跃迁的谱线强度都有明显的增强。通过对EL衰减等实验结果进行分析

我们认为在不同的温度下退火将会产生不同的影响

当退火温度低于300℃时

退火将使ZnS的结晶性能得到改善

并使有效的发光中心数目增加

当退火温度高于300℃时

将产生一些新的缺陷。它们都导致了Er

离子间交叉弛豫过程的加剧

使

9/2

能级的辐射得到加强。

Abstract

We have investigated systematically the interaction between Er

ions in ZnS:Er

and ZnS:ErF

thin films. In this paper

we will investigated the effect of annealing on the AC electroluminescence (ACEL) of ZnS:ErF

thin films.The devices arc ITO-Y

-ZnS:ErF

-Al structure.The devices were prepared by sequential depositions of Y

insulating layer

ZnS:ErF

emission iaytr and Al electrode onto an indium tin-oxide(lTO) coated glass plate. The deposition of Y

and ZnS:ErF

layers were carried out by electron-beam evaporation.The thickness of Y

and ZnS:ErF

layers are 300nm and 500nm

respectively. Before Al electrode were evaporated

the samples were annealed in N

atmosphere. The annealing conditions were 200℃

300℃

400℃ and 500℃ for two hours

and 2

10 an d12 hours at 500℃

respectively.

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