AN INVESTIGATION ON l.71eV LUMINESCENCE BAND IN GaP

Feng Jiandong; Lin Zhenjin; Yang Xizhen

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AN INVESTIGATION ON l.71eV LUMINESCENCE BAND IN GaP

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- AN INVESTIGATION ON l.71eV LUMINESCENCE BAND IN GaP
- Chinese Journal of Luminescence Vol. 8, Issue 2, Pages: 121-128(1987)
- 作者机构：
  
  北京师范大学物理系北京,100875
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：29 August 1986，
  
  Published：30 May 1987
- 稿件说明：
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冯建东, 林振金, 杨锡震. GaP中1.71eV发光带的研究[J]. 发光学报, 1987,8(2): 121-128

Feng Jiandong, Lin Zhenjin, Yang Xizhen. AN INVESTIGATION ON l.71eV LUMINESCENCE BAND IN GaP[J]. Chinese Journal of Luminescence, 1987,8(2): 121-128
冯建东, 林振金, 杨锡震. GaP中1.71eV发光带的研究[J]. 发光学报, 1987,8(2): 121-128 DOI：

Feng Jiandong, Lin Zhenjin, Yang Xizhen. AN INVESTIGATION ON l.71eV LUMINESCENCE BAND IN GaP[J]. Chinese Journal of Luminescence, 1987,8(2): 121-128 DOI：

摘要

本文研究了GaP中普遍出现的1.71eV光致发光(PL)宽带。这是一个与多个杂质能级有关的发光带

由吸收谱和光致发光激发谱(PLE)检测到在价带上方0.37—0.089eV范围内与该发光带有关的深能级。时间分辨谱测量表明。随着衰减过程的延续

谱峰移向低能方向

说明该带起源于D—A对复合。讨论了该发光带与背景Cu杂质有关的可能性及其发光机制和激发途径。

Abstract

A broad band peaked at 1.71eV is commonly observed in the PL spectra of

-GaP

[2-4

10]

. Comparing the PL spectra of epitaxial layer with that of the substrate

both have similar behaviours within the interested region. It can be concluded that the band stems from some background impurities or defects in the substrate. The shape of the broad band (Fig. 1) indicates that the band is a superposition of several bands.

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