An empirical estimation for the composition of GalnAsSb with the lattice matched to InP is introduced

which is based on the electronegativity difference of the constituent elements and the lattice constants of binary compounds. The results are in aggrement with those obtained by the following equation: a(Å)=6.0584-0.4165x+0.4204y+0.0317xy. Layers of GalnAsSb

for the first time

are achieved both on (100) and (111) B InP by LPE. The dependence of the surface morphology and hetero-interface quality on growth conditions is investigated. The solid compositions are varied from 0.46 to 0.51 for

x

and 0.02 to 0.045 for y

which is over the miscibility gap for the GalnAsSb reported respectively by K. Nakajima et al. The wavelength of the main luminescence peak can be shifted from 1340nm to 1630nm (Fig.4).In Fig.5

are shown the X-ray diffraction peaks of typical GaInAsSb/InP heterostructure. The FWHM for the epilayer is 12s

indicating the high layer quality.The electrical properties are taken from Van der Pauw measurements. Carrier concentration in the range of 10

15

cm

-3

and room temperature electron mobility up to 12210cm

2

/V·s

which are the highest data so far for the Ⅲ-Ⅴ quaternary alloys

have been achieved.