Blue electroluminescence of ZnSe MIS diodes had been obtained in the near band edge emission region

[1

2]

and the stimulated emission had also been observed in this region

[3

4]

. Many work in the origin of the blue emission of ZnSe at room temperature (RT) had been reported. The blue emission of ZnSe at RT was contributed by free exciton emission

[5]

the overlapping between free exciton emission and band-to-band transition

[6]

the emission due to the excitons which bounded to neutral donors

[7]

the band-to-band radiative recombinations

[8]

the bound-to-free transitions

[9]

and the exciton-carrier interaction

[10

1]

.In our earlier work

attention was focused on the identification of the free exciton emission

[11]

and the determination of the origin of the blue emission band

[1]

in ZnSe crystals. In this paper the recombination process of the blue emission at RT from VPE ZnSe epilayers was studied. It was found that the origin of the blue emission at RT could be contributed by the exciton-carrier interactions.