CATHODELUMINESCENCE SPECTRA AND MOSS-BURSTEIN SHIFT OF HEAVY DOPING InGaAsP

Li Yuzhang; Zheng Baozhen; Peng Huaide; Tang Jun; Zhuang Weihua

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CATHODELUMINESCENCE SPECTRA AND MOSS-BURSTEIN SHIFT OF HEAVY DOPING InGaAsP

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- CATHODELUMINESCENCE SPECTRA AND MOSS-BURSTEIN SHIFT OF HEAVY DOPING InGaAsP
- Chinese Journal of Luminescence Vol. 7, Issue 4, Pages: 344-348(1986)
- 作者机构：
  
  中国科学院半导体研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：15 April 1986，
  
  Published：30 November 1986
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李玉璋, 郑宝真, 彭怀德, 唐骏, 庄蔚华. 高掺杂InGaAsP材料的荧光光谱和Moss-Burstein移动[J]. 发光学报, 1986,7(4): 344-348

Li Yuzhang, Zheng Baozhen, Peng Huaide, Tang Jun, Zhuang Weihua. CATHODELUMINESCENCE SPECTRA AND MOSS-BURSTEIN SHIFT OF HEAVY DOPING InGaAsP[J]. Chinese Journal of Luminescence, 1986,7(4): 344-348
李玉璋, 郑宝真, 彭怀德, 唐骏, 庄蔚华. 高掺杂InGaAsP材料的荧光光谱和Moss-Burstein移动[J]. 发光学报, 1986,7(4): 344-348 DOI：

Li Yuzhang, Zheng Baozhen, Peng Huaide, Tang Jun, Zhuang Weihua. CATHODELUMINESCENCE SPECTRA AND MOSS-BURSTEIN SHIFT OF HEAVY DOPING InGaAsP[J]. Chinese Journal of Luminescence, 1986,7(4): 344-348 DOI：

摘要

本文研究了77K下

n型InGaAsP材料的阴极荧光。利用导带到类受主能级跃迁的模型

考虑到高掺杂样品带尾效应的影响

计算了高掺杂样品阴极荧光光谱随掺杂浓度变化的Moss-Burstein移动。理论计算结果与实验值较好地符合。

Abstract

The n-type InGaAsp cathodeluminescence spectra at 77K was studied. Using the model of the transition from conduction band to like-acceptor levels

we calculated the dependence of the Moss-Burstein shift on the doping concentration and the cathodeluminescence of heavy doping InGaAsp. The effect of the band tail of heavy doping samples was taken into account in the calculation. The theoretical values are consistent with the experimental ones.

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