STUDY OF THE CHARACTERISTICS FOR 1.3μm InGaAsP/InP DOUBLE HETERO-STRUCTURE LED'S

Shui Hai-long; Zhang Gui-cheng; Wu Xiang-sheng; Chen Qi-yu; Xu Shao-hua; Yang Yi; Chen Rui-zhang; Hu Dao-shan

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STUDY OF THE CHARACTERISTICS FOR 1.3μm InGaAsP/InP DOUBLE HETERO-STRUCTURE LED'S

更新时间：2020-08-11

- STUDY OF THE CHARACTERISTICS FOR 1.3μm InGaAsP/InP DOUBLE HETERO-STRUCTURE LED'S
- Chinese Journal of Luminescence Vol. 3, Issue 3, Pages: 72-77(1982)
- 作者机构：
  
  中国科学院上海冶金研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：28 May 1982，
  
  Published：30 August 1982
- 稿件说明：
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水海龙, 张桂成, 邬祥生, 陈启玙, 徐少华, 杨易, 陈瑞璋, 胡道珊. 1.3μm InGaAsP/InP双异质结发光管的特性研究[J]. 发光学报, 1982,3(3): 72-77

Shui Hai-long, Zhang Gui-cheng, Wu Xiang-sheng, Chen Qi-yu, Xu Shao-hua, Yang Yi, Chen Rui-zhang, Hu Dao-shan. STUDY OF THE CHARACTERISTICS FOR 1.3μm InGaAsP/InP DOUBLE HETERO-STRUCTURE LED'S[J]. Chinese Journal of Luminescence, 1982,3(3): 72-77
水海龙, 张桂成, 邬祥生, 陈启玙, 徐少华, 杨易, 陈瑞璋, 胡道珊. 1.3μm InGaAsP/InP双异质结发光管的特性研究[J]. 发光学报, 1982,3(3): 72-77 DOI：

Shui Hai-long, Zhang Gui-cheng, Wu Xiang-sheng, Chen Qi-yu, Xu Shao-hua, Yang Yi, Chen Rui-zhang, Hu Dao-shan. STUDY OF THE CHARACTERISTICS FOR 1.3μm InGaAsP/InP DOUBLE HETERO-STRUCTURE LED'S[J]. Chinese Journal of Luminescence, 1982,3(3): 72-77 DOI：

摘要

用液相外延技术生长的三层和四层InGaAsP/InP双异质结材料

制成了1.3μm InGaAsP/InP双异质结发光管。光功率输出(100mA)>1.0mW

最高2mW

尾纤输出功率(N.A.0.23

芯径60μ)>50μW。文中描述了器件的特性参数

还讨论了光功率的饱和特性和退化特性。

Abstract

The three and four layer InGaAsP/InP DH wafer used for fabrication of the LED's were grown by LPE technique. The InGaAsP/InP DH LED's have been fabricated. The device output was over 1mW

highest value was about 2mW. The output power of the tail fiber (core diameter 60 μm

N.A.=0.23) was over 50 μW. In this report the characteristics of the InGaAsP/lnP DH LED's are described and the characteristics of the output saturation and degradation Were discussed.

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