LOW-VOLTAGE, REVERSED-BIASED DIODES OF ERBIUM-IMPLANTED AND NEODYMIUM-IMPLANTED ZINC SELENIDE
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LOW-VOLTAGE, REVERSED-BIASED DIODES OF ERBIUM-IMPLANTED AND NEODYMIUM-IMPLANTED ZINC SELENIDE
Chinese Journal of LuminescenceVol. 3, Issue 1, Pages: 20-22(1982)
作者机构:
1. 中国科学院长春物理研究所
2. 英国Hull大学物理系
作者简介:
基金信息:
DOI:
CLC:
Published:28 February 1982
稿件说明:
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钟国柱, F. J. Bryant. 低压、反向偏压,铒和钕注入的ZnSe发光二极管[J]. 发光学报, 1982,3(1): 20-22
Zhong Guo-zhu, F. J. Bryant. LOW-VOLTAGE, REVERSED-BIASED DIODES OF ERBIUM-IMPLANTED AND NEODYMIUM-IMPLANTED ZINC SELENIDE[J]. Chinese Journal of Luminescence, 1982,3(1): 20-22
钟国柱, F. J. Bryant. 低压、反向偏压,铒和钕注入的ZnSe发光二极管[J]. 发光学报, 1982,3(1): 20-22DOI:
Zhong Guo-zhu, F. J. Bryant. LOW-VOLTAGE, REVERSED-BIASED DIODES OF ERBIUM-IMPLANTED AND NEODYMIUM-IMPLANTED ZINC SELENIDE[J]. Chinese Journal of Luminescence, 1982,3(1): 20-22DOI:
LOW-VOLTAGE, REVERSED-BIASED DIODES OF ERBIUM-IMPLANTED AND NEODYMIUM-IMPLANTED ZINC SELENIDE
Good electroluminescent diodes have been fabricated from neodymium-implanted or erbium-implanted zinc selenide crystals. These diodes have an external power efficiency of 5×10
-5
w/w and can be operated at very low voltage and at low temperature (e.g.77K). They Show the characteristic emission spectra of Nd