ANALYSIS AND INVESTIGATION FOR THE LED's OF MORE QUANTUM EFFICIENCIES AND SPECTRUM PEAKS

Zhan Su-zhen; Zheng Guang-fu

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ANALYSIS AND INVESTIGATION FOR THE LED's OF MORE QUANTUM EFFICIENCIES AND SPECTRUM PEAKS

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- ANALYSIS AND INVESTIGATION FOR THE LED's OF MORE QUANTUM EFFICIENCIES AND SPECTRUM PEAKS
- Chinese Journal of Luminescence Vol. 4, Issue 2, Pages: 63-69(1983)
- 作者机构：
  
  永川光电技术研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：18 December 1982，
  
  Published：30 May 1983
- 稿件说明：
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詹素真, 郑广富. 特性异常的发光管的分析研究[J]. 发光学报, 1983,4(2): 63-69

Zhan Su-zhen, Zheng Guang-fu. ANALYSIS AND INVESTIGATION FOR THE LED's OF MORE QUANTUM EFFICIENCIES AND SPECTRUM PEAKS[J]. Chinese Journal of Luminescence, 1983,4(2): 63-69
詹素真, 郑广富. 特性异常的发光管的分析研究[J]. 发光学报, 1983,4(2): 63-69 DOI：

Zhan Su-zhen, Zheng Guang-fu. ANALYSIS AND INVESTIGATION FOR THE LED's OF MORE QUANTUM EFFICIENCIES AND SPECTRUM PEAKS[J]. Chinese Journal of Luminescence, 1983,4(2): 63-69 DOI：

摘要

介绍了二类不同结构的(表面和侧面发射型)红外发光二极管.研究和分析了它们在低频大电流脉冲注入下的P

—I

特性和直流注入下的光谱特性.结果表明:正常情况下

器件具有线性的P

—I

特性

直流注入下的发射光谱具有高斯分布形状

对于Burrus表面发射型器件

在0—3A的峰值脉冲电流注入下

部分器件具有的异常P

—I

特性:线性-亚线性-超线性区.在20—100mA的直流电流注入下

部分器件的发射光谱具有多峰状.

Abstract

Two different structures(lateral and end emitting types)infrared LED's have been introduced.The P

—I

characteristics at low frequency high pulse current and the emission spectra at direct current have been investigated and analyzed.The results indicate that in the normal case

the LED's have linear P

—I

characteristics and Gauss distribution of emission spectrum.For Burrus surface emitting LED's

some of the LED's have abnormal P

—I

characteristics

from linear to sublinear to superlinear over the range of 0-3A pulse current

and some LED's have more than one spectrum peak over the range of 20-100mA direct current.

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