MEASUREMENT OF COMPOSITE UNIFORMITY OF Ga1-xAlxAs EPITAXIAL SURFACE WITH A LOWER POWER He-Ne LASER

Liu Xue-yan; Gao Ying

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MEASUREMENT OF COMPOSITE UNIFORMITY OF Ga_1-xAl_xAs EPITAXIAL SURFACE WITH A LOWER POWER He-Ne LASER

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- MEASUREMENT OF COMPOSITE UNIFORMITY OF Ga_1-xAl_xAs EPITAXIAL SURFACE WITH A LOWER POWER He-Ne LASER
- Chinese Journal of Luminescence Vol. 4, Issue 2, Pages: 46-50(1983)
- 作者机构：
  
  中国科学院长春物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：17 November 1982，
  
  Published：30 May 1983
- 稿件说明：
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刘学彦, 高瑛. 用小功率He-Ne激光器测量Ga1-xAlxAs外延片表面组份的均匀性[J]. 发光学报, 1983,4(2): 46-50

Liu Xue-yan, Gao Ying. MEASUREMENT OF COMPOSITE UNIFORMITY OF Ga1-xAlxAs EPITAXIAL SURFACE WITH A LOWER POWER He-Ne LASER[J]. Chinese Journal of Luminescence, 1983,4(2): 46-50
刘学彦, 高瑛. 用小功率He-Ne激光器测量Ga1-xAlxAs外延片表面组份的均匀性[J]. 发光学报, 1983,4(2): 46-50 DOI：

Liu Xue-yan, Gao Ying. MEASUREMENT OF COMPOSITE UNIFORMITY OF Ga1-xAlxAs EPITAXIAL SURFACE WITH A LOWER POWER He-Ne LASER[J]. Chinese Journal of Luminescence, 1983,4(2): 46-50 DOI：

摘要

本文描述了一种简便可靠的分析Ga

1-x

As外延片表面组份均匀性的光学方法.在300K下

用小功率He-Ne激光器作光源

对x

0.39的n型和p型外延层进行了光致发光测量.依据光谱峰值获得表面的x值与扫描电镜所得结果相符.通过激发表面不同点处测得的光致发光光谱的位移

可以迅速而直观地分析出x值分布的均匀性.

Abstract

This paper describes a simple and reliable optical method for analysing compositional uniformity of Ga

1-x

As epitaxial layer surface using a low power He-Ne laser as a light source.We have measured photoluminescence spectra for n type and p type epitaxial layers with x

0.39 at 300K.Each values of x obtained from the peak of photoluminescence spectra is consistent with that from SEM.From the position of the peak of photoluminescence spectra at different points of the surface

we can quickly and directly show the uniformity of x values.

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