Tomoyoshi MISHIMA, Fumitaka KlTAGAWA, Kiyoshi TAKAHASHI, Wang Quan-kun. PREPARATION OF LOW-RESISTIVITY ZnSe THIN FILMS BY MOLECULAR BEAM EPITAXY AND APPLICATIONS TO ELECTRONIC DEVICES[J]. Chinese Journal of Luminescence, 1982,(4): 25-31
Tomoyoshi MISHIMA, Fumitaka KlTAGAWA, Kiyoshi TAKAHASHI, Wang Quan-kun. PREPARATION OF LOW-RESISTIVITY ZnSe THIN FILMS BY MOLECULAR BEAM EPITAXY AND APPLICATIONS TO ELECTRONIC DEVICES[J]. Chinese Journal of Luminescence, 1982,(4): 25-31DOI:
PREPARATION OF LOW-RESISTIVITY ZnSe THIN FILMS BY MOLECULAR BEAM EPITAXY AND APPLICATIONS TO ELECTRONIC DEVICES
ZnSe single crystal thin films were grown on GaAs substrates by molecular beam epitaxy (MBE).The MBE growth and characterization of undoped and Ga-doped
low-resistivity ZnSe epilayers are discussed.The lowest resistivity of the Ga-doped ZnSe is 0.073 ohm·cm. Some interesting applications of ZnSe-MBE to such electronic devices as solar cell and EL cell are reported.