Fang Zhi-lie, Ni Lin-fu, Wang Man-sheng. YELLOW LIGHT-EMITTING DIODE OF GALLIUM ARSENIDE PHOSPHIDE[J]. Chinese Journal of Luminescence, 1982,3(1): 40-45
Fang Zhi-lie, Ni Lin-fu, Wang Man-sheng. YELLOW LIGHT-EMITTING DIODE OF GALLIUM ARSENIDE PHOSPHIDE[J]. Chinese Journal of Luminescence, 1982,3(1): 40-45DOI:
YELLOW LIGHT-EMITTING DIODE OF GALLIUM ARSENIDE PHOSPHIDE
The Yellow light-emitting diode of gallium arsenide phosophide was prepared with the tellurium doping n-type GaAs
0.15
P
0.35
:N/Gap material which was grown on gallium phosphide substrate by vapor phase epitaxy using ammonium doping arsenic vapor pressure method. The optical and electrical performances of the LED were measured. The factors w affect luminescent efficiency of the device were discussed.