ZnSe SINGLE-CRYSTAL FILMS GROWN FROM VAPOR PHASE EPITAXY AND THEIR ELECTROLUMINESCENCE

Shi Qi-wu

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ZnSe SINGLE-CRYSTAL FILMS GROWN FROM VAPOR PHASE EPITAXY AND THEIR ELECTROLUMINESCENCE

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- ZnSe SINGLE-CRYSTAL FILMS GROWN FROM VAPOR PHASE EPITAXY AND THEIR ELECTROLUMINESCENCE
- Chinese Journal of Luminescence Vol. 3, Issue 1, Pages: 23-28(1982)
- 作者机构：
  
  中国科学院长春物理研究所
- 作者简介：
- 基金信息：
- DOI：
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- Published：28 February 1982
- 稿件说明：
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史其武. 气相外延生长的ZnSe单晶薄膜及电致发光[J]. 发光学报, 1982,3(1): 23-28

Shi Qi-wu. ZnSe SINGLE-CRYSTAL FILMS GROWN FROM VAPOR PHASE EPITAXY AND THEIR ELECTROLUMINESCENCE[J]. Chinese Journal of Luminescence, 1982,3(1): 23-28
史其武. 气相外延生长的ZnSe单晶薄膜及电致发光[J]. 发光学报, 1982,3(1): 23-28 DOI：

Shi Qi-wu. ZnSe SINGLE-CRYSTAL FILMS GROWN FROM VAPOR PHASE EPITAXY AND THEIR ELECTROLUMINESCENCE[J]. Chinese Journal of Luminescence, 1982,3(1): 23-28 DOI：

摘要

用窄空间外延方法

在GaAs(100)衬底上外延生长了ZnSe(100)单晶薄膜.实验条件是

衬

=550℃

源

=650℃

-HCl气流速率为0.4-0.45l/min

生长速率为0.25-0.3μ/h.外延片在700℃的Zn和MnCl

蒸气中处理40-60分钟

以降低ZnSe的电阻率及掺入杂质Mn.利用这一外延层制作了MS结发光二极管

在反向偏压下获得黄色电致发光.

Abstract

(100) ZnSe single-crystal film have been grown on (100) oriented substrate of GaAs by Colse-spaced epitaxial process. The experimetal conditions are: T

sub

=550℃

sou

=650℃

the gas HOW of H

-HC1 is about 0.4-0.451/min and the growth rate is about 0.25-0.3μ/h. In order to reduce the resistivity of ZnSe and dope with Mn

epitaxial wafers are treated at 700℃ in zn and MnCl

vapour for 40-60 minutes. MS-junction luminescent diodes have been fabricated. Yellow electroluminescence has been obtained under reverse biased excitation.

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